Abstract: Achieving uniformity of patterns on photoresists is a significant challenge as process nodes get smaller. In practical production lines, the level sensor (LS) of the lithography system will ...
Abstract: Scaling trends in the alpha-particle and neutron induced SRAM SER shows an increase in the per-bit SER and percent multi-cell upsets at the 5-nm FinFET process compared to the 7-nm process.
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