IEEE

3-D Vertical Resistive Switching Random Access Memory (3D-VRRAM) With Multilevel Programming for High-Density, Energy-Efficient In-Memory Computing

Abstract: Resistive random access memory (RRAM) devices offer a broad range of attractive properties for in-memory computing (IMC) applications, such as nonvolatile storage, low read current, and high ...
IEEE

Engineering Ferroelectric Gate Dielectric to Achieve High-Performance Multilevel Organic Transistor Nonvolatile Memories With the Programming/Erasing Voltages Below 10 V

Abstract: It is urgent to overcome the bottleneck problems of high programming/erasing (P/E) voltage and slow P/E speed in the multilevel thin-film transistor nonvolatile memories (NVMs), for ...